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Freescale Semiconductor Technical Data
Document Number: MRF6S21050L Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 27.7% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF6S21050LR3 MRF6S21050LSR3
2110 - 2170 MHz, 11.5 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465E - 04, STYLE 1 NI - 400 MRF6S21050LR3
CASE 465F - 04, STYLE 1 NI - 400S MRF6S21050LSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 151 0.86 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S21050LR3 MRF6S21050LSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 50 W CW Case Temperature 76C, 12 W CW Symbol RJC Value (1,2) 1.16 1.28 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 450 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 0.75 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 -- -- 2 2.9 0.21 5.3 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps D IM3 ACPR IRL 15 26 -- -- -- 16 27.7 - 37 - 40 - 15 18 -- - 35 - 38 -9 dB % dBc dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched both on input and output.
MRF6S21050LR3 MRF6S21050LSR3 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C7 + C6 C5
R1 VSUPPLY C4 C3 C8 C9 C10 C11 + C12 + C13 + C14
Z6 RF INPUT
Z7
Z8
Z9 C2
Z10
RF OUTPUT
Z1
Z2 C1
Z3
Z4
Z5
DUT
Z1, Z10 Z2 Z3 Z4 Z5
0.750 x 0.084 Microstrip 0.905 x 0.084 Microstrip 0.435 x 0.173 Microstrip 0.073 x 0.333 Microstrip 0.070 x 0.333 Microstrip
Z6 Z7 Z8 Z9 PCB
0.113 x 0.590 Microstrip 0.325 x 0.590 Microstrip 0.214 x 0.150 Microstrip 0.723 x 0.084 Microstrip Arlon GX - 0300- 5022, 0.030, r = 2.5
Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic
Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values
Part B1 C1, C2, C3, C8 C4 C5, C11 C6 C7 C9, C10 C12 C13, C14 R1 Description Bead, Surface Mount 6.8 pF Chip Capacitors 0.01 F Chip Capacitor (1825) 2.2 F, 50 V Chip Capacitors (1825) 22 F, 25 V Tantalum Capacitor 47 F, 16 V Tantalum Capacitor 10 F, 50 V Chip Capacitors (2220) 47 F, 50 V Electrolytic Capacitor 220 F, 50 V Electrolytic Capacitors 3.3 W, 1/4 W Chip Resistor (1210) Part Number 2743019447 100B6R8CP500X C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AS GRM55DR61H106KA88B MVK50VC47RM8X10TP MVY50VC221MJ10TP ERJ - 14YJ3R3U Manufacturer Fair- Rite ATC Kemet Kemet Panasonic TE Series Kemet Murata Nippon Nippon Dale/Vishay
MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 3
C11 C10 C3 B1
C12
C13
R1
C8 C9
C4, C5* C7 C6 C14
CUT OUT AREA
C1
C2
MRF6S21050L Rev. 1
* C4 on bottom, C5 on top.
Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout
MRF6S21050LR3 MRF6S21050LSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
16.4 16.3 16.2 Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 11.5 W (Avg.) 16.1 I = 450 mA, 2-Carrier W-CDMA DQ 16 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% 15.9 Probability (CCDF) 15.8 15.7 15.6 15.5 ACPR IM3 Gps D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -20 -30 -40 -50 -60 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 -35 675 mA -30 IDQ = 225 mA -40 335 mA 450 mA -60 0.1 1 10 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 560 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) D 30 28 26 24 22 -32 IRL -34 -36 -38 -40
15.4 -42 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 11.5 Watts
16 15.9 15.8 Gps, POWER GAIN (dB) 15.7 15.6 15.5 15.4 15.3 15.2 15.1 IM3 IRL VDD = 28 Vdc, Pout = 23 W (Avg.) IDQ = 450 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) D
41 40 39 38 Gps 37 -24 -26 -28 -30
-32 ACPR 15 -34 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts
17.5 17 560 mA Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 225 mA 14 13.5 VDD = 28 Vdc, f1 = 2135 MHz f2 = 2145 MHz, Two-Tone Measurements, 10 MHz Tone Spacing 450 mA 335 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 675 mA
-10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20
-50
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 450 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order 5th Order -40 7th Order
52 51 Pout, OUTPUT POWER (dBm) 50 P1dB = 47.89 dBm (61.52 W) 49 48 47 46 45 VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz 29 30 31 32 33 34 35 36 Actual P3dB = 48.66 dBm (73.43 W) Ideal
-20
-30
-50
-60 0.01
0.1
1 TWO-TONE SPACING (MHz)
10
100
44 28
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25
Figure 8. Pulse CW Output Power versus Input Power
-20
-35 ACPR Gps -40 -45 -50 D 0.2 1 10 30 -55 -60 Pout, OUTPUT POWER (WATTS) AVG. W-CDMA
20 15 10 5 0
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
16.5 16 Gps, POWER GAIN (dB) 15.5 15 14.5 14 13.5 13 3 10 Pout, OUTPUT POWER (WATTS) CW 100 D VDD = 28 Vdc IDQ = 450 mA f = 2140 MHz Gps 64 56 D, DRAIN EFFICIENCY (%) 48 40 32 24 16 8 Gps, POWER GAIN (dB) 17 16.5 16 15.5 15 14.5 14 13.5 13 12.5 12 0 10 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) CW 16 V VDD = 12 V 20 V 24 V 28 V 32 V IDQ = 450 mA f = 2140 MHz
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21050LR3 MRF6S21050LSR3 6
Figure 11. Power Gain versus Output Power
IM3 (dBc), ACPR (dBc)
VDD = 28 Vdc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3 -25 -30
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS x AMPS2)
108
107
106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -15 -10 -5 0 5 10
3.84 MHz Channel BW
W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF
+IM3 in 3.84 MHz BW 15 20 25
-80 -25 -20
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 7
f = 2200 MHz Zload f = 2080 MHz f = 2200 MHz
Zo = 25
Zsource
f = 2080 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg. f MHz 2080 2090 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 Zsource 4.09 3.74 3.95 4.44 5.03 5.55 5.76 5.57 4.86 4.04 3.69 3.91 4.41 j14.65 j13.95 j13.36 j13.00 j12.89 j13.05 j13.26 j13.70 j13.92 j13.61 j12.91 j12.44 j12.32 Zload 2.36 2.25 2.40 2.68 2.99 3.26 3.32 3.20 2.82 2.44 2.33 2.49 2.77 j7.52 j7.11 j6.78 j6.59 j6.52 j6.64 j6.68 j6.87 j6.93 j6.70 j6.29 j6.05 j5.96
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S21050LR3 MRF6S21050LSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF6S21050LR3 MRF6S21050LSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc
M M
Q
M
bbb B 3
TB
M
A
M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.13) RADIUS OR .06.005 (1.520.13) x 45 CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC
B
TA
M
B
M
TA
M
B E
M
ccc C
M
TA
M
B
M
R (LID) F
aaa
M
TA
M
B
M
M (INSULATOR) A
T
SEATING PLANE
S (INSULATOR) aaa
M
H B
M
DIM A B C D E F G H K M N Q R S aaa bbb ccc
TA
M
A
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465E - 04 ISSUE F NI - 400 MRF6S21050LR3
2X D bbb M T A
1
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF
2
2X K R C
3 (LID)
ccc E
M
TA
M
B
M
N
ccc
M
TA
M
B
M
(LID)
F
A
(FLANGE)
A
T M
SEATING PLANE
H
S
(INSULATOR)
aaa
(FLANGE)
M
TA
M
B
M
(INSULATOR)
B
B
aaa
M
TA
M
B
M
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465F - 04 ISSUE E NI - 400S MRF6S21050LSR3
MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 11
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MRF6S21050LR3 MRF6S21050LSR3
Rev. 12 1, 5/2006 Document Number: MRF6S21050L
RF Device Data Freescale Semiconductor

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